s mhop microelectronics c orp. a symbol v ds v gs i dm w a p d c 2.5 -55 to 150 i d units parameter -30 -10 -56 v v 24 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max -30v -10a 16.5 @ vgs=-4.5v 12.5 @ vgs=-10v absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg ver 1.1 www.samhop.com.tw dec,24,2013 1 details are subject to change without notice. t a =25 c r ja thermal resistance, junction-to-ambient a c/w 50 e as single pulse avalanche energy d mj t a =70 c a t a =70 c w so-8 1 4 3 2 1 d d d d g s s 5 6 7 8 s -8 1.6 156 p-channel enhancement mode field effect transistor features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. esd protected. STM4639T green product
symbol min typ max units bv dss -30 v -1 i gss 10 ua v gs(th) -1.0 v 10 v sd c iss 3375 pf c oss 768 pf c rss 352 pf q g 46 60 nc q gs 210 nc q gd 57 t d(on) ns t r 7.6 ns t d(off) 16 ns t f ns gate-drain charge v ds =-10v,v gs =0v switching characteristics gate-source charge v dd =-15v i d =-5a v gs =-10v r gen = 4.7 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =-10v , i d =-5a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =-0.5ma v ds =-24v , v gs =0v v gs = 24v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =-10ma reverse transfer capacitance on characteristics -3.0 v gs =-4.5v , i d =-5a 13 m ohm c f=1.0mhz c v ds =-24v,i d =-10a, v gs =-10v drain-source diode characteristics and maximum ratings v gs =0v,i s =-10a -1.2 -1.8 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v.(see figure13) _ _ STM4639T ver 1.1 www.samhop.com.tw dec,24,2013 2 _ -1.7 12.5 16.5 nc 62 v ds =-24v,i d =-10a,v gs =-10v
STM4639T ver 1.1 www.samhop.com.tw dec,24,2013 3 drain current -i d (a) drain-source voltage -v ds (v) i d - v ds gate-source voltage -v gs (v) drain-source on-resistance r ds(on) (m ) 20 16 12 8 4 0 0 0.2 0.4 0.6 0.8 1.0 v gs =-2 .6v 15 12 9 6 3 0 0 0.8 1.6 2.4 3.2 4.0 -55 c tj=100 c 25 c 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 i d =10 a 5a 110 100 1 10 100 0.1 v g s =-4.5 v v g s =-10 v drain current -i d (a) drain-source voltage -v ds (v) i d - v ds drain current -i d (a) drain-source voltage -v ds (v) i d - v gs v ds - v gs gate-source voltage -v gs (v) drain current -i d (a) r ds(on) - i d -2.8 - 3.0 -2 .9 -3. 1 -3 .2 -4. 0 - 3.5 - 10 50 40 30 20 10 0 0 0.4 0.8 1.2 1.6 2.0 v gs =-2 .7v -3 .1 -3 .3 -3 .4 -3. 5 - 4.5 -10 -2. 7 -3 .6 -3.7 -2. 8 30 25 20 15 10 5 0 -80 80 40 -40 0 120 160 ambient temperature ta ( c ) r ds(on) (m ) v gs =-10v v gs =-4.5v drain-source on resistance r ds(on) - t a -4. 5 2. 5a -2 .9 - 4.0 - 3.2 - 3.0 i d = -2.5,-5,-10a i d = -2.5,-5,-10a
STM4639T ver 1.1 www.samhop.com.tw dec,24,2013 4 drain-source voltage -v ds (v) total gate charge qg (nc) 15 12 9 6 3 0 50 40 30 20 10 0 0816 24 32 40 48 56 64 gate threshold voltage -vth (v) ambient temperature ta ( c ) drain power dissipation p d (w) 3.0 2.4 1.8 1.2 0.6 0 0 40 80 120 160 -80 80 40 -40 0 2.5 2.0 1.5 1.0 0.5 0 120 160 drain-source voltage -v ds (v) 100 10 0.1 0 0.4 0.8 1.2 1.6 2.0 1 v gs =0v -1 -3 -4.5 -10 drain reverse current -i dr (a) i dr v ds vth ta ambient temperature ta ( c ) gate-source voltage -v gs (v) p d ta dynamic input/output characteristics v ds = v gs i d =- 0.5ma i d =- 10a v dd =-24v v dd =-24v -12 -6 -12 -6 capacitance c (pf) drain-source voltage -v ds (v) capacitance v ds 1000 100 10 100 0.1 10000 ciss coss 1 crss
STM4639T ver 1.1 www.samhop.com.tw dec,24,2013 5 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 mounted on fr-4 board single pulse pulse width tw (s) rth - tw transient thermal impedance rth ( c/w) drain current -id (a) drain-source voltage -v ds (v) safe operating area 0.1 1 10 30 10 1 0.1 0.03 100 v gs =-10v single pulse t a =25 c t = 1s t =10ms d c r ds (on ) limit t = 1ms t= 1 00ms t=1 0 0 us
www.samhop.com.tw 6 package outline dimensions so-8 symbols min min 0.004 0.189 0 1.35 0.10 1.25 0.17 4.80 3.70 0 max max 0.069 0.010 0.064 0.010 0.197 0.157 8 1.75 0.25 1.63 0.25 5.00 4.00 8 millimeters inches 1 e d a a1 b e h l h x 45 o a a1 a2 c d e e h l h 1.27 ref. 5.80 6.20 0.40 1.27 0.25 0.50 0.050 bsc 0.228 0.244 0.010 a2 c b 0.020 0.31 0.51 0.053 0.049 0.012 0.007 0.146 0.016 0.050 0.020 STM4639T dec,24,2013 ver 1.1
www.samhop.com.tw 7 so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.50 5.25 2.10 ? 1.5 (min) ? 1.55 12.0 +0.3 - 0.1 1.75 5.5 2 0.10 8.0 2 0.10 4.0 2 0.10 2.0 2 0.10 0.30 2 0.013 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15 a a e e1 e2 p0 d0 a0 b0 d1 p1 p2 feeding direction t k0 section a-a 2 0.15 2 0.10 2 0.10 2 0.10 2 0.10 terminal number 1 STM4639T dec,24,2013 ver 1.1
STM4639T www.samhop.com.tw dec,24,2013 8 top marking definition so-8 xxxxxt product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) ver 1.1 stm4639 smc internal code no. (a,b,c...z) pin 1
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